Research on semiconductor nanofabrication

Name

Kazuhiko Endo, Institute of Fluid Science, Professor

Outline of Research

The rapid development of artificial intelligence (AI) technology is permeating our daily lives and society, solving various social issues that have been difficult to solve in the past. The basic performance of AI digital technology, which is now becoming a part of our daily life infrastructure, is provided by semiconductor integrated circuit technology. Among the semiconductor integrated circuits, improving the performance of logic and memory has become an essential issue. Based on this background, mass production of advanced semiconductor integrated circuits of the 2nm technology generation is currently underway, and development is proceeding worldwide to improve the performance of beyond 2nm semiconductor integrated circuits.
In this study, we will conduct research on semiconductor nanofabrication that contributes to improving the performance of Beyond 2nm semiconductor integrated circuits.

Research Purpose

In this study, we will investigate atomically integrated fabrication techniques that will contribute to improving the performance of beyond 2nm semiconductor integrated circuits. For semiconductor materials, we will investigate the initial oxidation process and atomic layer deposition technology of silicon and germanium, and search for optimal materials and growth processes. Furthermore, the atomic layer deposition technology will be further investigated to pursue the ideal interface between insulating film and metal. In the area of integrated circuit wiring technology, the volume of effective wiring metal is decreasing, and the barrier layer, which is essential for copper wiring, is becoming thinner, resulting in a noticeable increase in resistance in the fine area. Therefore, we will conduct integrated research on new metal film deposition, its processing, and surface reaction control. In conjunction with the above research on wiring metals, research on new material etching technology will be conducted. Basic etching characteristics of metal and semiconductor materials will be evaluated, and new processes will be proposed based on surface reaction analysis.

Expected Effect

We plan to develop microfabrication technologies for highly reliable beyond 2nm integrated circuits to contribute to the competitiveness of semiconductors in Japan. Furthermore, we will develop elemental technologies for atomic and molecular processes that are indispensable for microfabrication. Accumulate basic intellectual property and know-how at the University and promote business development by collaborating with research partners.

Keywords

AI, Digital, Advanced Semiconductor, Nano Fabrication

SDGｓ

Contact Information

TEL：+81-22-217-5240
E-mail address: kazuhiko.endo＊tohoku.ac.jp
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